GT40WR21,Q(O Toshiba IGBT, 40 A 1800 V, 3-Pin TO-3P

Description

Dimensions: 15.5 x 4.5 x 20mm

Mounting Type: Through Hole

Maximum Power Dissipation: 375 W

Maximum Collector Emitter Voltage: 1800 V

Channel Type: N

Maximum Continuous Collector Current: 40 A

Maximum Gate Emitter Voltage: ±25V

Package Type: TO-3P

Switching Speed: 0.55µs

Gate Capacitance: 4500pF

Maximum Operating Temperature: 175 °C

Pin Count: 3

Transistor Configuration: Single

This is IGBT 40 A 1800 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT40WR21,Q(O. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 375 w maximum power dissipation. Whereas features a 1800 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 40 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has about 0.55µs switching speed . It has approximately 4500pf gate capacitance . It has a maximum operating temperature of 175 °c. It contains 3 pins. The product offers single transistor configuration.