HY Electronic Corp HYG15P120A1K1, 3 Phase Bridge IGBT Module, 20 A max, 1200 V, Through Hole

Description

Dimensions: 62.8 x 34 x 12mm

Mounting Type: Through Hole

Maximum Power Dissipation: 156 W

Maximum Collector Emitter Voltage: 1200 V

Channel Type: N

Maximum Continuous Collector Current: 20 A

Maximum Gate Emitter Voltage: ±20V

Minimum Operating Temperature: -40 °C

Configuration: 3 Phase Bridge

Maximum Operating Temperature: +125 °C

Pin Count: 22

Transistor Configuration: 3 Phase

This is 3 Phase Bridge IGBT Module 20 A max 1200 V Through Hole manufactured by HY Electronic Corp. The manufacturer part number is HYG15P120A1K1. The given dimensions of the product include 62.8 x 34 x 12mm. The product is available in through hole configuration. Provides up to 156 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 20 a continuous collector current . It offers a maximum ±20v gate emitter voltage . Whereas, the minimum operating temperature of the product is -40 °c. The product is available in 3 phase bridge configuration. It has a maximum operating temperature of +125 °c. It contains 22 pins. The product offers 3 phase transistor configuration.