HY Electronic Corp HYG15P120B1K1, 3 Phase Bridge IGBT Module, 20 A max, 1200 V, Through Hole

Description

Configuration: 3 Phase Bridge

Dimensions: 66 x 32.5 x 17.5mm

Mounting Type: Through Hole

Maximum Power Dissipation: 156 W

Maximum Continuous Collector Current: 20 A

Maximum Collector Emitter Voltage: 1200 V

Height: 17.5mm

Width: 32.5mm

Length: 66mm

Maximum Gate Emitter Voltage: ±20V

Minimum Operating Temperature: -40 °C

Channel Type: N

Maximum Operating Temperature: +125 °C Pin Count: 23 Transistor Configuration: 3 Phase

This is 3 Phase Bridge IGBT Module 20 A max 1200 V Through Hole manufactured by HY Electronic Corp. The manufacturer part number is HYG15P120B1K1. The product is available in 3 phase bridge configuration. The given dimensions of the product include 66 x 32.5 x 17.5mm. The product is available in through hole configuration. Provides up to 156 w maximum power dissipation. The product has a maximum 20 a continuous collector current . Whereas features a 1200 v of collector emitter voltage (max). In addition, the height is 17.5mm. Furthermore, the product is 32.5mm wide. Its accurate length is 66mm. It offers a maximum ±20v gate emitter voltage . Whereas, the minimum operating temperature of the product is -40 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +125 °c. It contains 23 pins. The product offers 3 phase transistor configuration.