Infineon FP75R12N3T7B11BPSA1 IGBT, 75 A 1200 V

Description

Maximum Continuous Collector Current: 75 A

Maximum Collector Emitter Voltage: 1200 V

Maximum Gate Emitter Voltage: 20V

Maximum Power Dissipation: 20 mW

This is IGBT 75 A 1200 V manufactured by Infineon. The manufacturer part number is FP75R12N3T7B11BPSA1. The product has a maximum 75 a continuous collector current . Whereas features a 1200 v of collector emitter voltage (max). It offers a maximum 20v gate emitter voltage . Provides up to 20 mw maximum power dissipation.