Infineon IRFB260NPBF N-channel MOSFET, 56 A, 200 V HEXFET, 3-Pin TO-220AB

Description

Maximum Drain Source Voltage: 200 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: HEXFET

Channel Type: N

Package Type: TO-220AB

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 56 A

Transistor Material: Silicon

Pin Count: 3

This is N-channel MOSFET 56 A 200 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRFB260NPBF. It has a maximum of 200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of to-220ab. It consists of 1 elements per chip. While 56 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.