IXYS IXFH60N65X2

Description

Maximum Continuous Drain Current: 60 A

Width: 5.21mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 650 V

Maximum Gate Threshold Voltage: 5V

Package Type: TO-247

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3.5V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 108 nC @ 10 V

Channel Type: N

Length: 16.13mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 780 W Series: HiperFET Maximum Gate Source Voltage: ±30 V Height: 21.34mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.4V Maximum Drain Source Resistance: 52 mΩ FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 5.5V @ 4mA Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-247-3 Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10VPackage: Tube Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 780W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V standardLeadTime: 47 Weeks Mounting Type: Through Hole Series: HiPerFET™, Ultra X2 Supplier Device Package: TO-247 (IXTH) Current – Continuous Drain (Id) @ 25°C: 60A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: IXFH60 ECCN: EAR99

This ismanufactured by IXYS. The manufacturer part number is IXFH60N65X2. While 60 a of maximum continuous drain current. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 108 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 780 w maximum power dissipation. The product hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 21.34mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 52 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.5v @ 4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 52mohm @ 30a, 10v. The maximum gate charge and given voltages include 107 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 780w (tc). The product’s input capacitance at maximum includes 6180 pf @ 25 v. It has a long 47 weeks standard lead time. The product hiperfet™, ultra x2, is a highly preferred choice for users. to-247 (ixth) is the supplier device package value. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfh60, a base product number of the product. The product is designated with the ear99 code number.