IXYS MMIX1F180N25T

Description

Maximum Continuous Drain Current: 132 A

Transistor Material: Si

Width: 23.25mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 250 V

Maximum Gate Threshold Voltage: 5V

Package Type: SMPD

Number of Elements per Chip: 1

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 364 nC @ 10 V

Channel Type: N

Length: 25.25mm

Pin Count: 24 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 570 W Series: GigaMOS, HiperFET Maximum Gate Source Voltage: -30 V, +30 V Height: 5.7mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.3V Maximum Drain Source Resistance: 13 mΩ FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 5V @ 8mA Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 24-PowerSMD, 21 Leads Rds On (Max) @ Id, Vgs: 13mOhm @ 90A, 10V Gate Charge (Qg) (Max) @ Vgs: 364 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10VPackage: Tube Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 570W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V standardLeadTime: 45 Weeks Mounting Type: Surface Mount Series: GigaMOS™, HiPerFET™, TrenchT2™ Supplier Device Package: 24-SMPD Current – Continuous Drain (Id) @ 25°C: 132A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: MMIX1F180 ECCN: EAR99

This ismanufactured by IXYS. The manufacturer part number is MMIX1F180N25T. While 132 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 23.25mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of smpd. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 364 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 25.25mm. It contains 24 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 570 w maximum power dissipation. The product gigamos, hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 5.7mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 13 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 8ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 24-powersmd, 21 leads. It has a maximum Rds On and voltage of 13mohm @ 90a, 10v. The maximum gate charge and given voltages include 364 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 250 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 570w (tc). The product’s input capacitance at maximum includes 23800 pf @ 25 v. It has a long 45 weeks standard lead time. The product gigamos™, hiperfet™, trencht2™, is a highly preferred choice for users. 24-smpd is the supplier device package value. The continuous current drain at 25°C is 132a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to mmix1f180, a base product number of the product. The product is designated with the ear99 code number.