ON Semiconductor NDFP03N150CG

Description

Maximum Drain Source Voltage: 1500 V

Typical Gate Charge @ Vgs: 34 nC @ 10 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Maximum Power Dissipation: 32 W

Maximum Gate Source Voltage: -30 V, +30 V

Maximum Gate Threshold Voltage: 4V

Height: 4.7mm

Width: 10.16mm

Length: 28.85mm

Maximum Drain Source Resistance: 10.5 Ω

Package Type: TO-220F

Number of Elements per Chip: 1 Maximum Continuous Drain Current: 5 A Transistor Material: Si Channel Type: N Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single Base Part Number: NDFP03 Detailed Description: N-Channel 1500V 2.5A (Ta) 2W (Ta), 32W (Tc) Through Hole TO-220-3 Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 30V Drive Voltage (Max Rds On, Min Rds On): 10V Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1A, 10V Drain to Source Voltage (Vdss): 1500V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Supplier Device Package: TO-220-3 Packaging: Tube Operating Temperature: 150°C (TJ) FET Type: N-Channel Customer Reference: Package / Case: TO-220-3 Full Pack Power Dissipation (Max): 2W (Ta), 32W (Tc) Current – Continuous Drain (Id) @ 25°C: 2.5A (Ta) Technology: MOSFET (Metal Oxide) Manufacturer: ON Semiconductor

This ismanufactured by ON Semiconductor. The manufacturer part number is NDFP03N150CG. It has a maximum of 1500 v drain source voltage. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 32 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 4.7mm. Furthermore, the product is 10.16mm wide. Its accurate length is 28.85mm. It provides up to 10.5 ω maximum drain source resistance. The package is a sort of to-220f. It consists of 1 elements per chip. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ndfp03. It features n-channel 1500v 2.5a (ta) 2w (ta), 32w (tc) through hole to-220-3. The product’s input capacitance at maximum includes 650pf @ 30v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It has a maximum Rds On and voltage of 10.5ohm @ 1a, 10v. The product has a 1500v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 34nc @ 10v. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 2w (ta), 32w (tc). The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. The on semiconductor’s product offers user-desired applications.