SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 ON Semiconductor NVH4L080N120SC1

Description

Maximum Drain Source Voltage: 1200 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: NVH

Channel Type: N

Maximum Gate Threshold Voltage: 4.3V

Maximum Drain Source Resistance: 0.08 Ω

Package Type: TO-247-4

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 29 A

Transistor Material: SiC

Pin Count: 4

FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: TO-247-4 Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V title: NVH4L080N120SC1 Vgs(th) (Max) @ Id: 4.3V @ 5mA REACH Status: REACH Unaffected edacadModel: NVH4L080N120SC1 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 20V edacadModelUrl: /en/models/12181331 Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -15V Moisture Sensitivity Level (MSL): Not Applicable Power Dissipation (Max): 170W (Tc) Qualification: AEC-Q101 standardLeadTime: 17 Weeks Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Mounting Type: Through Hole Grade: Automotive Series: – Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Supplier Device Package: TO-247-4L Packaging: Tube Current – Continuous Drain (Id) @ 25°C: 29A (Tc) Technology: SiCFET (Silicon Carbide) Base Product Number: NVH4L080 ECCN: EAR99

This is SiC N-Channel MOSFET Transistor 29 A 1200 V 4-Pin TO-247 ON Semiconductor manufactured by onsemi. The manufacturer part number is NVH4L080N120SC1. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product nvh, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.08 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. While 29 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 110mohm @ 20a, 20v. The typical Vgs (th) (max) of the product is 4.3v @ 5ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -15v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 170w (tc). It has a long 17 weeks standard lead time. The product’s input capacitance at maximum includes 1670 pf @ 800 v. The product is automotive, a grade of class. The maximum gate charge and given voltages include 56 nc @ 20 v. to-247-4l is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 29a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to nvh4l080, a base product number of the product. The product is designated with the ear99 code number.