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Vishay SiHG33N60EF-GE3 N-channel MOSFET, 33 A, 600 V EF Series, 3-Pin TO-247AC

Original price was: £4,54.Current price is: £1,36.

SKU: ET13845559 Category: Tag:

Description

Maximum Continuous Drain Current: 33 A

Transistor Material: Si

Width: 5.31mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 600 V

Package Type: TO-247AC

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 103 nC @ 10 V

Channel Type: N

Length: 15.87mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 278 W Series: EF Series Maximum Gate Source Voltage: -30 V, +30 V Height: 20.82mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 98 mΩ

This is N-channel MOSFET 33 A 600 V EF Series 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is SiHG33N60EF-GE3. While 33 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 103 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 278 w maximum power dissipation. The product ef series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 98 mω maximum drain source resistance.

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