Vishay SUD50P04-08-GE3 P-channel MOSFET, 50 A, 40 V, 3-Pin DPAK

Description

Maximum Continuous Drain Current: 50 A

Transistor Material: Si

Width: 6.22mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 40 V

Maximum Gate Threshold Voltage: 2.5V

Package Type: DPAK (TO-252)

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 1V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 106 nC @ 10 V

Channel Type: P

Length: 6.73mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 73.5 W Maximum Gate Source Voltage: -20 V, +20 V Height: 2.38mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.5V Maximum Drain Source Resistance: 10 mΩ

This is P-channel MOSFET 50 A 40 V 3-Pin DPAK manufactured by Vishay. The manufacturer part number is SUD50P04-08-GE3. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 106 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 73.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.38mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 10 mω maximum drain source resistance.